PERSPEKTIVNYE MATERIALY, 2021,  No. 8

Contents

Physico-chemical principles of materials development

S. A. Kazaryan, V. N. Nevolin, S. Kh. Pilosyan
Solvatochromic effects in absorption and luminescence spectra and stability
of emission quantum yield of carbon nanoparticles (part II)..............................................................5

 

Materials for insuring human life activity
and environmental protection

 

A. N. Venzhik, D. A. Nikolaev, I. V. Romanova
Study of rheological and structural properties of modified carboxymethyl cellulose
solutions using cross-linking agents based on substituted oxyranes................................................ 22

 

T. R. Chueva, N. V. Gamurar, V. I. Kalita, D. I. Komlev, A. A. Radyuk, V. S. Komlev,
A. Yu. Teterina, V. F. Shamray, A. B. Mikhailova

Influence of titanic substrate temperature on phase structure
of a plasma hydroxyapatite coating.................................................................................................. 33

 

Materials for general purpose

 

A. M. Klyushnikov, E. N. Selivanov, S. M. Pikalov
Features of thermal expansion of pyrite in air................................................................................... 44

 

New materials processing technologies

 

V. N. Gorshenev
Influence of technological conditions in the formation of electric conducting
thermoplastic polymergraphite composites...................................................................................... 55

 

E. V. Abdulmenova, S. N. Kulkov
Selective hydrogen absorption by Ti – Ni powder near equiatomic concentration
after a high-intensity mechanical treatment...................................................................................... 65

 

I. M. Doludenko
Features of pore filling of track membranes in synthesis
of nanowires of FeNi alloy................................................................................................................. 74

 

Methods of materials properties analysis

 

D. V. Andreev
Technique to monitor gate dielectric of MIS structure
based on high-field charge injection................................................................................................. 81